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APT50GF60BR
APT50GF60BR
600V 75A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
TO-247
C
* Low Forward Voltage Drop * Low Tail Current * Avalanche Rated
MAXIMUM RATINGS
Symbol VCES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
* High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated
G
C
E
G E
All Ratings: TC = 25C unless otherwise specified.
APT50GF60BR UNIT
600 600 20 75 50 160 100 75 300 -55 to 150 300
C mJ Watts Amps Volts
Collector-Gate Voltage (RGE = 20KW) Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current
1
@ TC = 25C
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
2
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX UNIT
600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.5 5.0
6-2000 052-6207 Rev E
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)
I CES I GES
mA nA
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50GF60BR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.66VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.66VCES I C = I C2 RG = 10W MIN TYP MAX UNIT
2250 255 155 175 18 100 29 118 150 190 28
ns nC pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +150C
75 265 185 1.8 2.4 4.2
ns
mJ
Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +25C VCE = 20V, I C = I C2
30 80 240 43 3.6 6
mJ S ns
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RQJC RQJA WT Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.42 40 0.22
oz gm
Package Weight
6.1 10
lb*in N*m
Torque
Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw)
1.1
6-2000
1 2 3
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, RGE = 25W, L = 100H, Tj = 25C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6207
Rev E
APT50GF60BR
100
IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)
100 VGE=13, 15 & 17V VGE=13, 15 & 17V 80 11V 60 10V 40 9V 20 8V 7V 0 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (TJ = 150C) 150
IC, COLLECTOR CURRENT (AMPERES)
250Sec. Pulse Test VGE = 15V
80 11V 60
40
10V
20
9V 8V
0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25C) 100
IC, COLLECTOR CURRENT (AMPERES)
0
100
80
TC=-55C TC=+25C TC=+150C
60
10
OPERATION HERE LIMITED BY VCE (SAT)
100S
40
1mS TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Safe Operating Area
20
10mS
0 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
10,000
20
IC = IC2 TJ = +25C
16
C, CAPACITANCE (pF)
Cies
f = 1MHz
VCE =120V VCE =300V
12
1,000 Coes
8
VCE =480V
4
Cres 100 0.01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 1.0
ZqJC, THERMAL IMPEDANCE (C/W)
0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0
0.5 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 0.01 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
SINGLE PULSE 0.001 10 -5
052-6207
10 -4 10 -3 10 -2 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Rev E
6-2000
APT50GF60BR
4.0
IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS)
80
3.5 3.0 2.5 2.0 0.5 IC2 1.5
60
IC1 IC2
40
20
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2
SWITCHING ENERGY LOSSES (mJ)
50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9, Maximum Collector Current vs Case Temperature 10
VCC = 0.66 VCES VGE = +15V TJ = +25C IC = IC2
0 25
1.1
8
Eon 6
1.0
0.9
4 Eoff 2
0.8
0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 10, Breakdown Voltage vs Junction Temperature 20
VCC = 0.66 VCES VGE = +15V RG = 10W
20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance 2.5
SWITCHING ENERGY LOSSES (mJ)
VCC = 0.66 VCES VGE = +15V TJ = +125C RG = 10W.
00
TOTAL SWITCHING ENERGY LOSSES (mJ)
10
IC1
2.0
Eoff
5
IC2
1.5
0.5 IC2 1
1.0
Eon
0.5
0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature 100
SWITCHING LOAD CURRENT (A)
10 20 30 40 50 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current
For Both: Duty Cycle = 50% TJ = +125C Tsink = +90C Gate drive as specified Power dissapation = 83W ILOAD = IRMS of fundamental
00
10
Rev E
6-2000
1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14, Typical Load Current vs Frequency 100 1000
052-6207
APT50GF60BR
90% A 10% t d (on) 90% V CC IC IC t d(off) 100uH 90% V CC 10 tr 10% tf E on E off *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Ets = E on + E off A 10 IC D.U.T. V CLAMP DRIVER*
tor e uc arg Ind -Ch e Pr
10% D.U.T. V CE(SAT)
Figure 16, Switching Loss Test Circuit and Waveforms
2
VCE(off) 90%
VGE(on)
V CC
0.1 F 1KV
50 F 600V
RL = 2
.66 VCES
I C2
D.U.T. 10% 1 VGE(off) t d (on) tr t d(off) tf From Gate Drive Circuitry R G = 10 Ohms
VCE(on)
1
Figure 17, Resistive Switching Time Test Circuit and Waveforms
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Collector (Cathode) Emitter (Anode)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6207
Dimensions in Millimeters and (Inches)
Rev E
6-2000

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